1959???? Ein Demonstrationsexperiment zur Bestimmung der Lichtgeschwindigkeit. HvP., H. H. Staub. Helvetica Physica Acta 32, 326-327.
1964???? A Phase Transition and its Influence on Superconductivity in the (Nb,V)-Au A-15-Type Structure. E. Bucher, F. Laves, J. Müller, HvP. Physics Letters 8, 27-28.
1964???? The Influence of Impurities on the Formation of the Cu3Au-Type Structure from the Cr3Si-type Structure. HvP, F. Laves. Acta Crystallographica 17, 213-214.
1964???? Mischsysteme von Verbindungen des Cr3Si-Typs und deren Polymorphie-Erscheinungen. HvP. 54 p. Dissertation Universit?t Zürich.
1967???? Growth of Single Crystals of Cadmium Chromium Selenide by Liquid Transport with Platinum Catalyst. HvP. J. Applied Physics 38, 955-956.
1967???? Ferromagnetic Resonance and other Properties in Cadmium Chromium Selenide. R. C. LeCraw, HvP, M. D. Sturge. J. Applied Physics 38, 965-966.
1967???? Growth and Properties of Single Crystals of the Ferromagnetic Semiconductor CdCr2Se4. HvP. Helvetica Physica Acta 40, 810-811.
1968???? Bandedge Shift of CdCr2Se4 Near Curie Temperature. C. R. Wen, B. Hershenov, HvP, H. Pinch. Applied Physics Letters 13, 188-190.
1968???? Device Application Feasibility of Single Crystal CdCr2Se4, a Ferromagnetic Semiconducting Spinel. C. R. Wen, B. Hershenov, HvP, H. Pinch. IEEE Transactions on Magnetics 4, 703-704.
1969???? Crystal Growth by Topochemical Reactions. CdCr2Se4 in the System CdSe-CrCl3-Pt. HvP. J. Crystal Growth 5, 135-138.
1969???? Internal Quantum Efficiency of GaAs1-xPx Electroluminescent Diodes. J. J. Tietjen, C. J. Nuese, HvP. Scientific Report AFCRL-69-0035, 22 p. Clearinghouse for Federal Scientific and Technical Information Washington D. C.
1970???? R?ntgenographische Untersuchung auf Spaltstruktur im Cr3Si-Typ. HvP. Z. Kristallographie 131, 73-87.
1970???? Electrical and Optical Properties of Vapour Grown GaAs:Si. H. Kressel, HvP. J. Applied Physics 41, 2244-2246.
1970???? Growth Steps in Epitaxial GaAs1-xPx. HvP. J. Crystal Growth 7, 246-250.
1971???? Crystal Growth and Characterization of Chromium Sulfo- and Selenospinels. HvP J. Crystal Growth 9, 296-304.
1971???? Chalcogenide Spinels and Alternative Structures. HvP. Z. Kristallographie 133, 464-472.
1971???? Croissance d'eulytine Bi4Si3O12 et des composés substitués par la méthode Czochralski. HvP. J. Crystal Growth 11, 348-350.
1972???? Kristalle und epitaktische Schichten aus der Gasphase. HvP, P. R. Sahm. Neue Zürcher Zeitung Technik 22. Febr. 1971, 15-18.
1974???? Zur Kristallchemie von Sulfid-und Selenidspinellen. HvP. Fortschritte der Mineralogie 51, 201-239.
1974???? Elektronenspinresonanz von Gd3+ in Wismutsilikat Bi4(SiO4)3. H. Hagen, F. Waldner, G. Lang, HvP. Helvetica Physica Acta 47, 431.
1974???? Kristallographie - Aufgaben, Methoden und Ergebnisse. HvP. Regensburger Universit?tszeitung Sept. 1974, 25-32.
1974???? Mineralogy in Industry HvP. Exkursionsführer zur IMA-DMG Tagung Regensburg 1974. Fortschritte der Mineralogie 52 Beiheft 1, 139-149.
1977???? Whiskers, Hoppers und Dendriten. Kristallskelette - physikalisch-chemische Ursachen anomaler Wachstumsformen. HvP. Lapis 2, Heft 12, 9-13.
1978???? Critical Speeding-Up of Spin-Relaxation in CdCr2Se4. J. K?tzler, HvP. Physical Review Letters 40, 790-793,
1978???? Widmannst?ttensche Figuren - Orientierte Ausscheidungen in Eisenmeteoriten. HvP. Lapis 3 Heft 12, 12-15.
1979???? X-ray Diffraction and Spectroscopic Investigations of Phase Transitions in Linear Chain Compounds. W. Daniels, H. Yersin, HvP, G. Gliemann. Solid State Communications 30, 353-355.
1980???? Untersuchungen mit R?ntgen-Dünnschichtdiffraktometer: Struktur dünner Schichten von Oxid-Halbleitern. HvP, K. K. Weiner. Z. Kristallographie 154, 81-82.
1983???? Zeit/Temperatur-aufgel?ste Pulverdiffraktometermessungen mit ortsaufl?sendem Detektor. W. Ru?wurm, HvP, H. E. G?bel. Z. Kristallographie 162, 193-194.
1986???? Structural Data of beta-Zn7Sb2O12. W. Ru?wurm, R. Bruchhaus, HvP. Naturwissenschaften 73, 662-563.
1987???? Kristallchemische Untersuchungen an thalliumdotierten CsI-Einkristallen. J. Lindner, B. C. Grabmaier, HvP, Z. Kristallographie 180, 20-21.
1989???? Contrast phenomena of band-band and deep-level photoluminescence topographs in annealed semi-insulating GaAs. H. Ch. Alt, M. Neef, HvP. Applied Physics Letters 55, 1972-1974.
1990???? 10 GBit/s on-chip photodetection with self-aligned silicon bipolar transsitors. J. Popp, HvP. Proceedings ESSERC 571-574.
1990???? Silicon Bipolar Technology - A Versatile Base for High-Speed Communication Circuits- L. Treitinger, E. Bertagnolli, K. Ehinger, J. Popp, M. Raisch, H. Kabza, R. Schreiter, I. Kerner, R. K?pl, H. Weidlich, J. Weng, HvP, H. M. Rein. Internat. Zürich Seminar on Digital Communications Proceedings IEEE, 27-38.
1991???? Borosilcate Glass and its Application in Bipolar Technology. M. Bianco, K. Ehinger, B. Kautke, H. Klose, HvP. Microelectronics Engineering 15, 525-528.
1991???? Temperature Expansion in (La,Sr)(Mn,Co)O3 Cathode Materials for Solid Oxide Fuel Cells. A. Iberl, HvP, M. Schie?l, E. Ivers-Tiffee, W. Wersing, G. Zorn. Proceedings First European Powder Diffraction Conf. Zürich. Trans Tech. Publ. 869-874.
1991???? High Temperature X-ray Diffraction Measurements of Phase Transitions and Thermal Expansion? in (La,Sr)(Mn,Co)O3 Cathode Materials. A. Iberl, HvP, M. Schie?l, E. Ivers-Tiffee, W. Wersing, G. Zorn. Proceedings Second Int. Symposium on Solid Oxide Fuel Cells Athens, 527-535.
1992???? Ultrashallow Emitter-Base Profiles by Double Diffusion. M. Biebl, M. Bianco, K. Ehinger, HvP, H. Klose. 22nd European Solid State Device Research Conference, Leuven, 347-350.
1994???? Perimeter Effects and Doping Conditions in Narrow-Emitter Silicon Bipolar Transistors. J. B?ck, J. Popp, R. Schreiter, HvP. Proceedings of the 24th European Solid State Device Research Conf. Edinburgh, 47-50.
1994???? Controlled Sub-nm Oxide Growth and its Application to High Speed Bipolar Poly-Emitter Transistors. A. M. Berthold, J. G. M. Mulder, A. vom Felde, L. F. T. Kwakman, J. Weitzel, HvP, H. Klose. Proceedings of the 24th European Solid State Device Research Conf. Edinburgh, 51-54.
1994???? Micromechanics Compatible to a 0.8 ?m CMOS Process. M. Biebl, T. Scheiter, C. Hierold, HvP, H. Klose. Eurosensors 1994 - 8th European Conf. on Solid State Transducers. Toulouse 181.
1994???? The Role of Point Defect Sources in the Formation of Boron Polyemitters. A. Berthold, A. vom Felde, M. Biebl, HvP, Proceedings Int. Electron Device Meeting San Francisco. Technical Digest 509-512.
1994???? The Effect of Substrate Impurities on the Electronic Conductivity in CIS Thin Films. J. Holz, F. Karg, HvP. Proceedings 12th European Photovoltaic Solar Energy Conf. Amsterdam 1592-1595.
1995???? Micromechanics Compatible with a 0.8?m CMOS Process. M. Biebl, T. Scheiter, C. Hierold, HvP, H. Klose. Sensors and Actuators A 46/47, 593-597.
1995???? Fracture strength of doped and undoped polysilicon. M. Biebl, HvP. Proceedings Stockholm Conf. on Solid State Sensors and Actuators 72-75.
1995???? In-situ doped emitter-polysilicon for 0.5 ?m silicon bipolar technology. J. B?ck, M. Franosch, H. Sch?fer, HvP, J. Popp. Proc. 25th European Solid State Device Research Conf. Den Haag 421-424.
1997???? Oxidation enhanced diffusion of boron on silicon-on-insulator substrates. S. Pindl, M. Biebl, E. Hammerl, H. Sch?fer, HvP. Proceedings of the Sixth Int. Symp. On Ultralarge Scale Integration Science and Technology, Montreal. Electrochem. Soc. 623-631.
1997???? Oxidation enhanced diffusion of boron on silicon-on-insulator substrates. S. Pindl, M. Biebl, E. Hammerl, H. Sch?fer, HvP. J. Electrochemical Society 144, 4022-4026.
1997???? Optimization of Ultra High Density MOS Arrays in 3D. H. Haneder, E. Bertagnolli, HvP, W. Krautschneider, F. Hofmann, J. Willer, T. Boehm. Proc.27th Solid State Device Research Conf. Stuttgart, 268-271.
1997???? As and B Diffusion in TiSi2/Polysilicon Gates with Dual Workfunction Gate Technology. A. Berthold, E. Hammerl, HvP. Proc.27th European Solid State Device Research Conf. Stuttgart, 744-747.
1998???? DC and AC Performance of Si and Si/Si1-xGex Bipolar Transistors at Temperatures up to 300°C.M. Pohl, K. Aufinger, J. B?ck, T. F. Meister, HvP. Proc. of the European Solid State Device Research Conference ESSDERC Bordeaux. 100-103.
1998 ?? A Partially Depleted SOI CMOS-Technolgy with Advanced Processing for 130 nm Channel Length. S. Pindl, J. Berthold, T. Huttner, S. Reif, D. Schumann, HvP. ESSDERC Bordeaux 268-271.
1999???? A 130 nm-Channel Length Partially Depleted SOI CMOS-Technology. S. Pindl, J. Berthold, T. Huttner, S. Reif, D. Schumann, HvP. IEEE Trans. on Electron Devices 46, 1562-1566.
2000???? Effect of film composition on low temperature processing of SBT deposited by MOCVD. H. Bachhofer, F. Hintermaier, M. Hauf, O. Spindler, T. Haneder, C. Dehm, HvP. Mater. Res. Symp. Proceed. 596, 149-154.
2000???? Gate stacks for low voltage ferroelectric field effect devices based on Pt/SBT/CeO2/Si(100). H. Haneder, W. H?nlein, H. Bachhofer, M. Ullmann, HvP, R. Waser. Mater. Res. Symp. Proceed. 596, 437-442.
2000???? On the erase mechanism in SONOS nonvolatile memories. H. Bachhofer, H. Reisinger, HvP, E. Bertagnolli. 17th IEEE Nonvolatile Semiconductor Memory Workshop. 124-126.
2000???? Scalable High Voltage Trenchgate Transistor for Flash. E. Landgraf, F. Hofmann, HvP. Proceed. 30th European Solid State Device Research Conf., 380-383.
2001???? Relaxation effects and steady-state conduction in non-stoichiometric SBT films. H. Bachhofer, R. Reisinger, H. Schroeder, T. Haneder, C, Dehm, HvP. Ferroelectrics 33, 245-252.
2001???? Transient conduction in multidielectric silicon-oxide-nitride-oxide semiconductor Structures. H. Bachhofer, R. Reisinger, E. Bertagnolli, HvP. J. Applied Physics 89, 2791-2800.
2001???? Phase formation and crystal growth of S-Bi-Ta-O thin films grown by metalorganic vapour deposition. H. Bachhofer, HvP, W. Hartner, C. Dehm, B, Jobst, A. Kiendl, H. Schroeder, R. Waser. J. Materials Research 16, 2966-
2001???? Effect of oxygen ion implantation on the crystallization of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapour deposition. H. Bachhofer, R. Liedtke, N. Nagel, HvP, R. Waser. J. American Ceramic Soc….
2001???? Optimization of Pt/SBT/CeO2/Si (100) gate stacks for low voltage ferroelectric field effect devices. T. Haneder, W. H?nlein, H. Bachhofer, HvP, R. Waser. Integrated Ferroelectrics 34, 47-54.
2001???? Zinn - einige Eigenschaften und Verwendungen. HvP. In: Der Seidige Glanz, Zinn in Ostbayern und B?hmen. Schriftenreihe des Bergbau- und Industriemuseums Ostbayern, Band 42, 15-25.
2002???? Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films. H. Bachhofer, R. Reisinger, G. Steinlesberger, N. Nagel, H. Cerva, HvP, H. Schroeder, R. Waser. Integrated Ferroelectics 39, 289-
2002???? Substrate Current and Degradation of Trench LDD transistors. E. Landgraf, F. Hofmann, T. Schulz, HvP. Solid State Electronics 46, 965-970.?